Effect of fission products on tensile strength of UO<sub>2</sub> Σ3 (111)/[1<math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg" class="math"><mover accent="true"><mn>1</mn><mo stretchy="true">¯</mo></mover></math>0] and UO<sub>2</sub> Σ11 (1<math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg" class="math"><mover accent="true"><mn>1</mn><mo stretchy="true">¯</mo></mover></math>3)/[110] grain boundaries from first-principles study

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变化四：新兴先进封测技术的兴起CoWoS先进封装可谓HBM的黄金搭档。随着全球对于高性能计算（HPC）及人工智能（AI）芯片需求的持续增长，也推动了对于台积电CoWoS（Chip on Wafer on Substrate）先进封装产能的需求暴涨，虽然台积电持续扩大产能，但依然难以满足市场需求，成为了限制HPC及AI芯片产能的另一关键瓶颈。这也使得部分客户考虑寻求台积电CoWoS以外的替代方案，其中就包括英特尔的EMIB-T先进封装技术。

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